chip silicon rectifier MRA4001T3 thru mra4007t3 glass passivated type features plastic package has underwrit ers laboratory flammability classification 94v -o ut iliz ing flame retardant epox y m olding compound. for surfac e mounted applications. ex ceeds environmental standards of m il-s- 19500 / 228 low leakage current . mechanical dat a case : mol ded plastic, jed ec do-214ac termi nals : solder plated, solderable per mi l-std-750, method 2026 pol arity : indicated by c athode band mounting p osition : any weight : 0.0015 ounce, 0.05 gram (v) (v) (v) (v) ( o c) MRA4001T3 a1 50 35 50 mra4002t3 a2 100 70 100 mra4003t3 a3 200 140 200 mra4004t3 a4 400 280 400 mra4005t3 a5 600 420 600 mra4006t3 a6 800 560 800 mra4007t3 a7 1000 700 1000 symbols marking code 1.1 -55 to +150 operating temperature v rrm *1 v rms *2 v r *3 v f *4 maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit forward rectified current see fig.2 i o 1.0 a forward surge current 8.3ms single half sine-wave superimposed on rate load (jedec methode) i fsm 30 a v r = v rrm t a = 25 o c 5.0 ua v r = v rrm t a = 100 o c 50 ua thermal resistance junction to ambient r q ja 50 o c / w diode junction capacitance f=1mhz and applied 4vdc reverse voltage c j 15 pf storage temperature t stg -55 +150 o c reverse current i r *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage f o r m o s a m s 0.205(5.2) 0.189(4.8) 0.012(0.3) typ. 0.110(2.8) 0.094(2.4) 0.181(4.6) 0.165(4.2) 0.075(1.9) 0.067(1.7) 0.040 (1.0) typ. 0.040(1.0) typ. dimensions in inches and (millimeters) sma-l
.1 1.0 10 100 rating and characteristic curves ( ) MRA4001T3 thru mra4007t3 fig.3 - typical reverse characteristics r e v e r s e l e a k a g e c u r r e n t , ( m a ) percentage rated peak reverse vol tage 0 20 40 60 80 100 120 140 .01 fig.2-typical forward current dera ting curve a v e r a g e f o r w a r d c u r r e n t , ( a ) tj=100 c tj=25 c fig.4-maximum non-repetitive forward surge current 0.2 0 0.4 0.6 0.8 1.0 1.2 ambient temperature ( c) single phase half wave 60hz resistive or inductive load 0.1 1.0 .01 10 50 fig.1-typical forward characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) forward volt age,(v) pulse width 300us 1% duty cycle .6 .7 .8 .9 1.0 1.1 1.2 1.3 3.0 tj=25 c fig.5-typical junction capacit ance reverse voltage,(v) j u n c t i o n c a p a c i t a n c e , ( p f ) 35 30 25 20 15 10 5 0 .01 .05 .1 .5 1 5 10 50 100 p e a k f o r w a a r d s u r g e c u r r e n t , ( a ) 10 0 20 30 40 50 number of cycles at 60hz 1 10 5 50 100 tj=25 c 8.3ms single half sine wave jedec method 0 20 40 60 80 100 120 140 160 180 200
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